I.MolecularNetworkTopology OptimizationoftheSiliconeAdhesiveLayer–ປັບປຸງBulkCreepResistance 1.HighMQResin/SiliconeRubberRatioand'Hard-Core'ໂຄງສ້າງ ThemanufactureradoptsMQsiliconeresinasthecoretackifierandreinforceingagent,ເພີ່ມຂຶ້ນtheMQ/gumratioto1.2:1–2:1(ຢ່າງມີປະສິດທິພາບສູງກວ່າມາດຕະຖານທີ່ມີຄວາມສໍາຄັນ).ThishighMQratioforms ຕໍ່ເນື່ອງ rigid'hard-phase'microdomains withintheadhesivelayer, which constrainthemovement ofsiloxanechainsegmentsands provethestantiallyimprovethestoragemodulusandcreepresistanceatetemperatures.
2.IncorporationofHeat-ResistantRigidGroupsandHigh-Bond-EnergyCrosslinkingSites Phenyl,diphenyl,orcarboranegroupsareintroduction tothepolydimethylsiloxanebackbone (ຕົວຢ່າງ, ເນື້ອໃນ 20–30mol% phenyl) ຕໍ່ກັບhinderthermalchainmotion ແລະຍົກສູງທັງສອງອຸນຫະພູມການປ່ຽນແປງຂອງແກ້ວແລະ. rmaldecompositiontemperature.Thecrosslinkingsystempreferentiallyemployysaddition-curehydrosilylation(Pt-catalyzed), forming–C–C–or–Si–C–crosslinkingbridges withsuperiorthermalstability.
3.ControlofMolecularWeightBetweenCrosslinks(Mc) andNetworkDefects ໂດຍທີ່ຊັດເຈນການປັບເນື້ອໃນຂອງທາດໄຮໂດຣເຈນທີ່ມີການເຄື່ອນໄຫວ ແລະ ຄວາມຍາວຂອງສາຍໂສ້ຂອງທາດໄຮໂດຣເຈນທີ່ບັນຈຸມີຊິລິໂຄນອອຍ, ມີຄວາມສົມດຸນກັບດິນເອກະພາບMc (ປະມານ 5,000–15,000g/mol) ແມ່ນບັນລຸຜົນໄດ້, ຮັບປະກັນວ່າເນື້ອເຍື່ອ. ການເຮັດວຽກຮັກສາຄວາມຢືດຢຸ່ນສູງເຖິງແມ່ນວ່າອຸນຫະພູມສູງ. Extendedpost-curingorhigh-temperatureannealingisappliedtoconsumeresidualreactivegroupsandreducestressrelaxationcaused bynetwork defects.
II.GradientModulusMultilayerAdhesiveStructure–BalancingTackandCreepResistance 'Primer-anchoringlayer+High-moduluscohesivelayer+Viscoelasticfunctionallayer'ການອອກແບບສາມຊັ້ນ 1.Primer-anchoringlayer(1–3μm): ນຳໃຊ້sasilanecouplingagentທີ່ປະກອບດ້ວຍ epoxyoracryloyloxygroups,pre-polymerizedwithMQresin,toprovidebothchemicalbondingtothePTFEsubstrateandco-crosslinking withtheuppersiliconelayer.
2.High-moduluscohesivelayer(mainbody, approx.30–50μm): Useshigh-MQ-ratio, high-phenyl-content,high-crosslink-densitysiliconeadhesivetofurnisharobustshear-resistantskeleton.
3.Viscoelasticfunctionallayer(incontactwiththeadherend,3–8μm): Employslow-MQ-ratioorhydroxy-terminatedsilicone-oil-modifiedsoftsiliconeadhesivetolowersurfacemodulusandensurerapidwetting and conformability totheadherendatelevatedtemperatures.
III.Nanofillers ສໍາລັບການກໍ່ສ້າງທາງກາຍຍະພາບຂ້າມເຊື່ອມຕໍ່ແລະທົນທານຕໍ່ຄວາມຮ້ອນ 1.In-SituReinforcementandSurfaceModificationofNano-Silica Themanufacturerusesfumedsilica(specificsurfacearea200–380m²/g), ປິ່ນປົວຜິວໜ້າດ້ວຍvinyltriethoxysilaneorhexamethyldisilazane, ataloading of10–25wt%. reversiblephysicalcrosslinkingnetwork thatdissipatesenergy and preventsmolecular chainslippageathightemperatures.High-shardispersionensures thatthesilicaexistsas'cluster' withagglomeratesizes below 100nm,voidingstress concentration.
2.DirectionalCreepResistancevia2DNanomaterials Additionof1–5wt%few-layergrapheneororgano-modifiednano-montmorillonite,whareorientedinalayeredarrangementthroughshear-inducedalignmentduringcoating,formsa'mazeeffect'paralleltothetapep ເລນ, ເພີ່ມຄວາມຕ້ານທານຕໍ່ລະບົບຕ່ອງໂສ້ການເຄື່ອນທີ່ເພີ່ມຂຶ້ນຢ່າງມີໄນສໍາຄັນ.
IV.ChemicallyIntegratedSubstrate–AdhesiveInterface andProcessControl 1.SurfaceActivationandBifunctionalPrimerforChemicalBonding PTFEsurface ແມ່ນປະຕິບັດເປັນຄັ້ງທຳອິດດ້ວຍ asodium–naphthalene–THFsolutionorlow-pressureargon/oxygenplasmatogenerateanactivatedlayercontainingcarboxylandhydroxylgroups.Aprimersolutioncontainingbfunctionalmolecules(e.g,isocyanatesilane,titanatecoupling) titanistepoxymediaane ated.Oneendoftheprimerreactswith–OH/–COOHonthePTFEsurface, while theotherend participatesinhydrosilylationorcondensationcrosslinking withthesiliconeadhesive, formingachemicalbondnetwork that penetratestheinterface.This approachcanincreasepowerhigh-temperature2°°6–timeholding.
2.RampedCuringandPost-TreatmenttoEliminateDefects Arampedcuringprofileisemployed: ທໍາອິດ, ການແກ້ໄຂສານສະກັດຈາກຊັ້ນກາງຂອງຊັ້ນສູງ 80-100 ° C; ຫຼັງຈາກນັ້ນ, ການຫຸ້ມຫໍ່ hydrosilylation ແລະຄວາມຫນາແຫນ້ນຂອງMQresinarecompletedat 150-170 ° C; ສຸດທ້າຍ, ໄປສະນີ -curingiscarriedoutat200–220°C ເປັນເວລາຫຼາຍຊົ່ວໂມງ ກໍາຈັດຄວາມເຄັ່ງຕຶງພາຍໃນ ແລະ ສະຖຽນລະພາບທາງກາຍຍະພາບຂ້າມຈຸດເຊື່ອມຕໍ່.Slowcooling ປ້ອງກັນ microcrackingduetodifferential ຄວາມຮ້ອນຫົດຕົວ.
ຂໍ້ມູນຂ້າງເທິງແມ່ນສະໜອງໃຫ້ໂດຍ JiangsuAokai NewMaterialTechnologyCo., Ltd.
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